Transforming the Economics of Storage

Intel® 3D NAND Technology extends our leadership in flash memory with an architecture designed for higher capacity and optimal performance, a proven manufacturing process providing accelerated transitions and scaling, and rapid portfolio expansion for multiple market segments.

Storage Capacity Empowered by Intel® Innovation

Intel introduces the world’s first PCIe* SSDs with QLC technology. Intel® QLC 3D NAND Technology provides up to 33% higher capacity1 than its 3D NAND predecessor. It also uniquely features PCIe* acceleration, to deliver a reliable mix of performance, capacity, and value-making it a smart storage solution for both datacenter and client markets.

Intel® QLC Technology leverages current 3D NAND, with a proven 64-layer structure, and adds a new cell that provides 4bits/cell (QLC), making it the world's highest-density flash memory. Additionally, this technology uses a floating gate cell because it is a reliable, low-cost storage method. Last, Intel® QLC Technology was paired with PCIe*- (NVMe*) technology, to provide up to a 4x performance benefit over SATA interfaces.2

Prepare for the future with Intel QLC-built on reliable Intel® technology and backed by Intel manufacturing leadership.

Finally, SSD Performance Meets Big Business Value

For datacenters, Intel® QLC 3D NAND Technology radically shrinks HDD system footprints.3 Fewer systems to maintain lead to power and cooling savings4, while also reducing operation and capital costs associated with drive replacements.5 And while footprint goes down, performance goes up.6 PCIe* acceleration blasts through SATA bottlenecks7, unleashing the full power of QLC. When coupled with optional Intel® Optane™ technology, Intel® 3D NAND Technology datacenter products deliver even better performance2, accelerating access to data needed most.

Do more, store more, and save more with Intel® QLC Technology featured in the Intel® SSDs D5-P4320 and D5-P4326 Series-Currently shipping in limited quantities and available broadly winter, 2018.

Amazing Is Now Affordable

Intel® QLC 3D NAND Technology enables consumers to tackle today’s storage needs and prepare for the growing demands of tomorrow. These client SSDs pack in more data than TLC-based storage, allowing up to 2x more capacity in identical footprints.1 Only Intel coupled this game-changing technology with PCIe* to deliver affordable PCIe performance.

Shop Intel® QLC 3D NAND SSD

Architected for Capacity and Reliability

Intel® 3D NAND Technology is an innovative response to the industry’s growing demand for data storage capacity. Compared to other available NAND solutions, Intel® 3D NAND Technology is designed on floating gate architecture with a smaller cell size and a highly efficient memory array, which enables higher capacity solutions and high reliability with strong protection from charge loss.

See How 3D NAND Advances Storage

Intel® 3D NAND Technology accelerates Moore's Law into three dimensions, overcoming the capacity limitations of traditional 2D NAND technology. The vertical layering of our 3D NAND enables higher areal density today, with scalability for the future.

Innovation Leadership

64-Layer Breakthrough

Intel has applied 30 years of flash cell experience to transition NAND from 2D to 3D, multi-level cell (MLC) to tri-level cell (TLC), and 32-layer to our breakthrough 64-layer technology. All of this is done to deliver the highest areal density8 and rapidly grow storage capacities in 3D NAND solutions.

Expansive Portfolio

Built on a Proven Process

With 3D NAND technology, Intel delivers innovative, high-value capabilities into a broad product portfolio. Our experience of designing this architecture into SSD solutions enables us to rapidly improve performance, power consumption, performance consistency, and reliability with each generation.

Manufacturing Scalability

Enabling Disruptive Opportunities

Intel is using manufacturing processes proven by decades of high volume output to build 3D NAND technology. With strong generational synergy across our factory network, Intel expects to grow 3D NAND capacity faster than the market, enabling us to deliver disruptive total cost of ownership and application acceleration to our customer base.

Informasi Produk dan Performa

1

TLC (tri-level cell) berisi 3 bit per sel dan QLC (quad level cell) berisi 4 bit per sel. Dihitung sebagai (4-3)/3 = 33% lebih banyak bit per sel.

 

2

4 node vSAN Cluster – konfigurasi sistem 1 node: Model server: Intel Purley S2600WF (R2208WFTZS); MB: H48104-850; CPU: Prosesor ganda Intel® Xeon® Gold 6142 2,6 G, 16C/32T, 10,4 GT/s, Cache 22 M, Turbo, HT (150W) DDR4-2666; Mem: RDIMM 16 GB, 2666 MT/s, Dual Rank x16; NICs: Intel X520-DA2 10GbE SFP+ DAC dan Intel X722 10GbE LAN terpasang. Konfigurasi semua TLC: 2x Intel® SSD Data Center Seri P4610 1,6 TB untuk caching dan 4x Intel® SSD Data Center Seri P4510 4,0 TB untuk penyimpanan kapasitas; Konfigurasi Memori Intel® Optane™+QLC: 2x Intel® Optane™ SSD DC P4800X 375 GB untuk caching dan 2x Intel® SSD D5-P4320 7,68 TB untuk kapasitas penyimpanan. 2 Beban Kerja: HCIBench: https://labs.vmware.com/flings/hcibench. Jumlah VM: 16, Jumlah Disk Data: 8, Ukuran Disk Data: 60 Jumlah Disk yang Diuji: 8, Persentase Set Kerja: 100, Jumlah Thread Per Disk: 4, Ukuran Blok: 4K, Persentase Pembacaan: 70, Persentase Acak: 50, Waktu Uji: 3600. Hasil: Konfig P4610+P4510 = 83.451 IOPS latensi @ 6,3 md. Konfig P4800x+P43220 = 346.644 IOPS latensi @ 1,52 md. 

 

3

Membandingkan WD Gold TB Enterprise class 7200 RPM HDD 4 TB 3,5’ yang memungkinkan hingga 24 HDD per 2U serta total 20U dan 960 TB dengan 30,72 TB E1.L Intel® SSD D-5 P4326 (tersedia pada tanggal mendatang) yang memungkinkan hingga 32 per 1U dan total 1U dan 983 TB. Jadi 20 unit rak menjadi 1 unit rak.

 

4

Penghematan biaya Daya, Pendinginan, Konsolidasi. Berdasarkan HDD: HDD 4 TB 7,2 K RPM, AFR 2,00% dan daya aktif 7,7 W, 24 drive pada 2U (total daya 1971 W) https://www.seagate.com/files/www-content/datasheets/pdfs/exos-7-e8-data-sheet-DS1957-1-1709US-en_US.pdf SSD: daya aktif 22 W 44% AFR, 32 drive pada 1U (total daya 704 W); Biaya pendinginan berdasarkan penggunaan selama 5 tahun dengan biaya Kwh sebesar $0,158 dan jumlah watt untuk mendinginkan 1 watt 1,20 Berdasarkan 24 drive HDD 2U 3,5” dan 32 drive 1U EDSFF 1U Long. Penyimpanan hibrida berdasarkan pada penggunaan Intel® TLC SSD untuk cache.

 

5

Penghematan biaya Penggantian Drive. Perhitungan: HDD 2% AFR x 256 drive x 5 tahun = 25,6 penggantian dalam 5 tahun; SSD: 0,44% AFR x 32 drive x 5 tahun = 0,7 penggantian dalam 5 tahun.

 

6

Membandingkan IOPS pembacaan acak 4K dan Kedalaman Antrean 32 antara SSD Intel D5-P4320 dan HDD Toshiba N300. 175.000 IOPS: Data yang diukur dari SSD Intel D5-P4320 7,68 TB. IOPS pembacaan acak 4K; Kedalaman Antrean 32. 532 IOPS: Berdasarkan benchmark Tom’s Hardware untuk HDD Toshiba N300 8 TB 7,2K RPM. IOPS pembacaan acak 4K; Kedalaman Antrean 32: https://www.tomshardware.com/reviews/wd-red-10tb-8tb-nas-hdd,5277-2.html. Jadi IOPS pembacaan acak 4K adalah 329X lebih baik.

 

7

IOPS PCIe* berdasarkan pada simulasi pembacaan acak 4K, antrean kedalaman 256, perkiraan performa yang dilakukan oleh Intel untuk Intel D5-P4320/D5-P4326, SSD QLC berbasis PCIe*, dengan beragam kapasitas: 3,84 TB; 7,68 TB; 15,36 TB, dan 30,72 TB. IOPs SATA diatur ke 100K IOPS untuk semua poin kapasitas berdasarkan 100K IOPS sebagai nilai maks yang memungkinkan untuk SSD basis SATA kompetitif dari Micron. Lembar data Micron 5200 Series NAND Flash SSD menunjukkan IOPs QD32 IOPs pembacaan acak 4K maks dari 95K IOPs untuk SKU 3,84 TB dan 7,68 TB. Lembar data ada di sini: https://www.micron.com/parts/solid-state-storage/ssd/mtfddak7t6tdc-1at16ab?pc={1E253C11-6399-4D14-A445-F1DE2EB7ECAC}

 

8

Membandingkan densitas area data terukur Intel pada Intel® 3D NAND 512 GB dengan beberapa pesaing perwakilan berdasarkan makalah 2017 IEEE International Solid-State Circuits Conference yang menyebutkan ukuran keping Samsung Electronics dan Western Digital/Toshiba untuk komponen 3D NAND 64 tumpuk.